1 transistor 2sd638, 2sd639 silicon npn epitaxial planer type for medium-power general amplification complementary to 2sb643 and 2sb644 n features l low collector to emitter saturation voltage v ce(sat) . l m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC71 3:emitter m type mold package 6.9 0.1 0.55 0.1 0.45 0.05 1.0 0.1 1.0 2.5 0.1 1.0 1.5 1.5 r0.9 r0.9 r0.7 0.4 0.85 3.5 0.1 2.0 0.2 2.4 0.2 1.25 0.05 4.1 0.2 4.5 0.1 2.5 2.5 1 2 3 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 30 60 25 50 7 1 0.5 600 150 C55 ~ +150 unit v v v a a mw ?c ?c 2sd638 2sd639 2sd638 2sd639 n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ceo v cbo v ceo v ebo h fe1 *1 h fe2 v ce(sat) f t c ob conditions v cb = 20v, i e = 0 v ce = 20v, i b = 0 i c = 10 m a, i e = 0 i c = 2ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 10ma v ce = 10v, i c = 500ma *2 i c = 300ma, i b = 30ma v cb = 10v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 30 60 25 50 7 85 40 typ 160 90 0.35 200 6 max 0.1 1 340 0.6 15 unit m a m a v v v v mhz pf *1 h fe1 rank classification rank q r s h fe1 85 ~ 170 120 ~ 240 170 ~ 340 *2 pulse measurement 2sd638 2sd639 2sd638 2sd639
2 transistor 2sd638, 2sd639 p c ta i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb i ceo ta 0 200 160 40 120 80 0 800 600 200 500 700 400 100 300 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 020 16 412 8 0 800 600 200 500 700 400 100 300 ta=25?c i b =10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma 1ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 010 8 26 4 0 800 600 200 500 700 400 100 300 v ce =10v ta=25?c base current i b ( ma ) collector current i c ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0 300 250 200 150 100 50 v ce =10v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 0 240 200 160 120 80 40 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 12 10 8 6 4 2 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v ce =10v ambient temperature ta ( ?c ) i ceo ( ta ) i ceo ( ta=25?c )
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